Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RJP30E4 Datasheet, RJP30E4 PDF. Datasheet search engine for Electronic Components and Semiconductors. RJP30E4 data sheet, alldatasheet, free, databook. RJP30E4 parts ... Apr 30, 2019 · Features. 1. JEDEC JESD84 V4.3 compatible 2. Backward compatible with earlier JESD84 3. Maximum data rate with up to 52MB/sec interface speed ( using 8 parallel data lines )

Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline How to use this site If a little interested, you can repair TV, Radio, PC, Telephone. RJP30E4 Datasheet pdf, RJP30E4 PDF Datasheet, Equivalent, Schematic, RJP30E4 Datasheets, RJP30E4 Wiki, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout Electronic component search and free download site.