MJE13007 www.onsemi.com 4 0.01 0.02 0.05 0.1 0.2 0.5 1 SINGLE PULSE There are two limitations on the power handling ability o f a transistor: average junction temperature and second Parameter l Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4.0 A Base Current IB 2.0 A Total Dissipation at Ptot 70 W

NPN Silicon Transistor, ST-13007 datasheet, ST-13007 circuit, ST-13007 data sheet : SEMTECH_ELEC, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Plug with pre-installed leads and crimp connectors (H1 and H7). Adapts to original wiring by crimp connector and heat shrink insulator, H4 version with 200mm leads (no connectors). To find a HELLA reseller near you, click here. MJE13005 Power Transistor Page 1 31/05/05 V1.0 Switchmode Series NPN Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC