Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-621.b ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, V GS=0V, T J=150°C 400 V Breakdown Voltage Temperature Coefficient ∆BV DSS/∆T

SIPMOS Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 0.7 Ω ID 1.1 A Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated PG-SOT-223 1 VPS05163 2 3 4 Marking BSP296 Type Package Tape and Reel Information BSP296 P-SOT-223 E6327 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit