A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet.
The intrinsic strength and critical fracture strain of (4, 8) carbon sheet are chirality dependent and very much comparable to graphene. Thus semiconducting (4, 8) carbon sheet can be a very promising material for electronics and photonics applications. Acknowledgments
Carbon nanotubes are fascinating nanostructures. A sheet of graphene as in common graphite, but rolled up in small tubes rather than planar sheets. Carbon nanotubes have unique mechanical properties such as high strength, high stiffness, and low density and also interesting electronic properties. Oct 08, 2018 · In 2017, Kim and his colleagues devised a method to produce "copies" of expensive semiconducting materials using graphene -- an atomically thin sheet of carbon atoms arranged in a hexagonal ...
The current chapter presents a study of recent research on semiconducting/graphene nanocomposites. The first part presents different methods to synthesize graphene and graphene oxide (GO) and to change GO to reduced graphene oxide (rGO). In addition, different techniques usually applied to characterize GO and rGO are introduced. Jan 29, 2019 · Graphene as a semiconductor Semiconductors are defined by their band gap: the energy required to excite an electron stuck in the valence band, where it cannot conduct electricity, to the conduction band, where it can.
The application of graphene in semiconducting devices is hindered by its lack of a bandgap. Up to now, two different strategies have been employed to fabricate semiconducting two-dimensional crystals: opening a bandgap in graphene [1-3] or using another two-dimensional crystal with a large intrinsic bandgap . Review Article Synthesis and Applications of Semiconducting Graphene ShahrimaMaharubin, 1 XinZhang, 2 FuliangZhu, 3 Hong-ChaoZhang, 1 GengxinZhang, 4 andYueZhang 5 Department of Industrial Engineering, Texas Tech University, Lubbock, TX , USA
Graphene sheets have been reported to be grown by dosing ethylene onto the clean, single platinum(111) substrate at temperatures above 1000 °C in ultra-high vacuum (UHV). Graphene monolayer interacts weakly with the Pt(111) surface below it confirmed by the local density of states which is a ‘V’ shape. If a graphene sheet has to be used as an active layer in device fabrication, similar to other semiconducting materials, its band gap must be opened.
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness In this paper, based on first principles calculations, we predict a novel 2D planar direct semiconducting carbon allotrope. The structure of the allotrope, shown in Fig. 1, can be simply viewed as a result of replacing one-third of parallel aromatic bonds in AA-stacked bilayer graphene by carbon dimers.
The transformation of graphene into a semiconductor has attracted significant attention, because the presence of a sizable bandgap in graphene can vastly promote its already-fascinating potential in an even wider range of applications. Here we review major advances in the pursuit of semiconducting graphene materials. Moreover, the mechanical properties of (4, 8) carbon sheet are evaluated from the Young’s modulus and intrinsic strength calculations. We find this is a stable planar semiconducting carbon sheet with a bandgap between 0.43 and 1.01 eV and whose mechanical properties are as good as graphene’s.
When a single (or many) sheet (one atom thick) of graphene are rolled to make a cylindrical structure, then the resulting structure will be called a carbon nanotube (CNT).
Penta-graphene can also be stacked to form 3D stable structures displaying different properties from those of the mother-phase T12-carbon. Thus, penta-graphene sheet not only possesses exotic properties by itself but also can be used to build new structures. We hope that these findings will motivate experimental efforts. Jun 11, 2008 · Structural and electronic properties for oxygen-adsorbed graphene sheets have been explored using first-principles total-energy calculations within the local density functional theory. A finite energy gap emerges for the oxygen-adsorbed graphene and its value increases with the ratio of O ∕ C, as manifested by experiments
The transformation of graphene into a semiconductor has attracted significant attention, because the presence of a sizable bandgap in graphene can vastly promote its already-fascinating potential in an even wider range of applications. Here we review major advances in the pursuit of semiconducting graphene materials.
Duan and co-workers 20, fabricated semiconducting graphene using copolymer lithography and demonstrated that GNM-based field-effect transistors (FETs) exhibit comparable ON/OFF current ratios but 100 times higher drive currents than those of the similar devices based on individual GNRs. This is the post-peer reviewed version of the following article: A.Castellanos-Gomez et al.. “Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS