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IRF640N/IRF640NS/IRF640NL Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Charicteristics Figure 8. Saturation Charactoristics Figure 9. Normalized Drain To Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature irf640n/s/lpbf www.irf.com 9 ˘ ˇ ˘ ˆ ˙˝ ˛ ˙ date code year 0 = 2000 week 02 a = assembly site code rectifier international
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IRFI640G, SiHFI640G Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. www.vishay.com
IRFI640G SiHFI640G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 9.8 TC = 100 °C 6.2 A Pulsed Drain Currenta IDM 39 Linear Derating Factor 0.32 W/°C Single Pulse Avalanche Energyb EAS 430 mJ
Document Number: 91150 www.vishay.com S09-0013-Rev. A, 19-Jan-09 1 Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix FEATURES • Isolated Package † High Voltage Isolation = 2.5 kVRMS (t = 60 s;
The IRF1607PBF is MOSFET N-CH 75V 142A TO-220AB, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel ...
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