2N6975, 2N6976, S E M I C O N D U C T O R 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 April 1995 Features Package JEDEC TO-204AA 5A, 400V and 500V BOTTOM VIEW VCE(ON) 2V COLLECTOR EMITTER (FLANGE) TFI 1s, 0.5s Low On-State Voltage GATE Fast Switching Speeds High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE C Power S SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration

electron Tube Data sheets Compactron Survey Compactron Survey by TRI-COMP, July 2013 Download as pdf. Type: System: Similar or (Equivalent) Basing: Pa(W) POWER TRANSISTORS NPN SILICON, 2N6277 datasheet, 2N6277 circuit, 2N6277 data sheet : ONSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components ... The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.