The equations for calculating bulk resistivity are different from those used to calculate sheet resistance, however, if one already knows the sheet resistance, bulk resistivity can be calculated by multiplying the sheet resistance in Ohms-per-square by the thickness of the material in centimeters. Q. polysilicon gate in stead of metal gate. The scaling has the problem of thin junction depth in source and drain range. The junction depth in source and drain for the scaling requires shallower junction depth. But the shallow junction profile has high resistance. The source and drain high impurity concentration makes the resistance low. This Since the starting wafer for PMOS here is N-type, I am doing P diffusions of Boron for the source/drain regions and am targeting a sheet resistance in diffused regions of 100 to 250 Ω/sq. The above mentioned patterning steps are then repeated twice for the gate oxide layer and then the contact layer.

this issue, nickel silicide source/drain electrodes showed a very low sheet resistance and enhanced the TFT character-istics.5,6) However in the nickel silicide approach, the fabrication procedure is still complex with doping require-ments and the removal of metal after the silicidation process. Aluminum is recognized as a suitable material for the metal-induced crystallization of poly-Si.7) The diffusivity of The MOS transistor. The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor available is the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The BSIM-CMG source/drain resistance model offers multiple options: • simple “sheet resistance” method (sheet rho * # of squares) • a complex “spreading resistance” model through the raised S/D epi