Jul 24, 2010 · Hmm, going and buy one of those really cheap Mastech meters for about £2.99 just for the transistor test seems like too much. One of my meters came with an external transistor tester, but your meter manufacturer may have been cheap and skimped on this.
2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCE 50 Vdc Collector−Base Voltage VCB 50 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 900 5 ... MPSA29 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CES Collector-Emitter Breakdown Voltage*IC = 100 µA, IB = 0 100 V V(BR)CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 100 V
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 Œ MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current *Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO-35 V Collector-Emitter Voltage V CEO-30 V Emitter-Base Voltage V EBO-5 V Peak Pulse Current ICM-2 A Continuous Collector Current I C-1 A
8050S NPN Transistor . Power Dissipation: 0.625W Collector Current: 0.5A Collector-Base Voltage:: 45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage www.fairchildsemi.com 4 of 4 7/20/01 ds300361 disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Browse DigiKey's inventory of NPN TransistorsNPN. Features, Specifications, Alternative Product, Product Training Modules, and Datasheets are all available.
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Features Satisfactory foward current transfer ratio h FE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR M04 DESCRIPTION NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides PN2222A *MMBT2222A **PZT2222A PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W PN2222A MMBT2222A PZT2222A EBC TO-92 SOT-23 SOT-223 Mark:1P C B E E B C C Text: Transistor Bipolar Transistor Quick Reference by Package Quick Reference by Function/Application Small Signal Transistor Power Transistor Transistor for Array Bipolar Transistor MOS,FET Transistor Array Product List Transistor with Internal Resistor Product List Field Effect Transistor Small , Application Road map Product category Main ...
Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors - Page 1100 Looking for 2a transistor? Find it and more at Jameco Electronics. Browse over 30,000 products, including Electronic Components, Computer Products, Electronic Kits and Projects, Robotics, Power Supplies and more. 2SC1636 datasheet, cross reference, circuit and application notes in pdf format.
Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors - Page 1100
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C ...
TRANSISTOR datasheet, TRANSISTOR pdf, TRANSISTOR data sheet, datasheet, data sheet, pdf A844 datasheet, A844 pdf, A844 data sheet, datasheet, data sheet, pdf
MPSA29 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CES Collector-Emitter Breakdown Voltage*IC = 100 µA, IB = 0 100 V V(BR)CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 100 V Features, Applications: Power dissipation 25°C DC current gain hFE 4 A VCE( Sat) 1.1 V (Maximum) 400 mA Designed for use general-purpose amplifier and low - frequency switching applications A844 datasheet, A844 pdf, A844 data sheet, datasheet, data sheet, pdf